MRF21085LSR3_08 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
30
V_DD = 28 Vdc, I_DQ = 1000 mA
25 ^{f1 = 2135 MHz, f2 = 2145 MHz}
η ^−25
− 30
− 25
− 30
V_DD = 28 Vdc
I_DQ = 1000 mA
45
40
3.84 MHz Channel Bandwidth
IM3
−35 ^{f1 = 2135 MHz}
35
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
f2 = 2145 MHz
20
− 35
− 40
30
15
Gps
− 40
− 45
3rd Order
− 50
10
ACPR
− 45
5th Order
− 55
5
− 50
− 60
η
7th Order
0
− 55
− 65
1
10
30
4
10
25
20
15
10
5
100
P_out, OUTPUT POWER (WATTS Avg.) N−CDMA
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and
Drain Efficiency versus Output Power
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion
Products versus Output Power
− 25
− 30
− 35
I_DQ = 700 mA
− 40
1300 mA
− 45
1150 mA
850 mA
− 50
V_DD = 28 Vdc
1000 mA
f1 = 2135 MHz
f2 = 2145 MHz
− 55
4
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
24 _η
0
22
− 10
IRL
20
2−Carrier W−CDMA
10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
V_DD = 28 Vdc
P_out = 19 W (Avg.) ^−20
I_DQ = 1000 mA
18 Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
− 30
IM3
16
− 40
ACPR
14
− 50
Gps
12
− 60
2090
2110
2130
2150
2170
2190
f, FREQUENCY (MHz)
Figure 6. 2-Carrier W-CDMA Broadband
Performance
14.5
14
13.5
13
12.5
12
11.5
2
60
G _ps
50
40
30
η
20
V_DD = 28 Vdc
10
I_DQ = 1000 mA
f = 2140 MHz
0
10
100 130
P_out, OUTPUT POWER (WATTS)
Figure 7. CW Performance
MRF21085LSR3
6
42
− 24
IMD
41 _η
− 25
40
− 26
39
− 27
38
− 28
37
− 29
36 I_DQ = 1000 mA
− 30
f = 2140 MHz
35 _{10 MHz Tone Spacing}
− 31
34
− 32
24
25
26
27
28
29
V_DD, DRAIN SUPPLY (V)
Figure 8. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
RF Device Data
Freescale Semiconductor