MRF21085LSR3_08 Datasheet, PDF (3/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued)
Two - Tone Common - Source Amplifier Power Gain
G_ps
—
13.6
—
dB
(V_DD = 28 Vdc, P_out = 90 W PEP, I_DQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Two - Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 90 W PEP, I_DQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
—
36
—
%
Two - Tone Intermodulation Distortion
IMD
—
- 31
—
dBc
(V_DD = 28 Vdc, P_out = 90 W PEP, I_DQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Input Return Loss
IRL
—
- 12
—
dB
(V_DD = 28 Vdc, P_out = 90 W PEP, I_DQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
P_out, 1 dB Compression Point
(V_DD = 28 Vdc, I_DQ = 1000 mA, f = 2170 MHz)
P1dB
—
100
—
W
RF Device Data
Freescale Semiconductor
MRF21085LSR3
3