MRF21085LSR3_08 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
—
—
Vdc
I_DSS
—
—
10
μAdc
I_GSS
—
—
1
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1000 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc, V_GS = 0, f = 1.0 MHz)
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
C_rss
—
—
4
Vdc
3.9
5
Vdc
0.18
0.21
Vdc
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3
measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
G_ps
12
13.6
—
dB
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
20
23
—
%
Third Order Intermodulation Distortion
IM3
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz
and f2 +10 MHz referenced to carrier channel power.)
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and
f2 +5 MHz.)
- 41
- 38
dBc
Input Return Loss
IRL
—
- 12
-9
dB
(V_DD = 28 Vdc, P_out = 19 W Avg., I_DQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz)
1. Part is internally matched both on input and output.
(continued)
MRF21085LSR3
2
RF Device Data
Freescale Semiconductor