MRF21085LSR3_08 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

f = 2170 MHz
Z_o = 5 Ω
Z_load
f = 2110 MHz
f = 2170 MHz
Z_source
f = 2110 MHz
MRF21085LSR3
8
V_DD = 28 V, I_DQ = 1000 mA, P_out = 19 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
1.10 - j3.71
1.11 - j3.57
1.23 - j2.10
1.26 - j1.92
2170
1.12 - j3.40
1.25 - j1.76
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 13. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor