MRF8P26080H Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V_DD = 28 Vdc, I_DQA = 300 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
52
Ideal
51
50
f = 2595 MHz
49
48
f = 2595 MHz
47
Actual
46
45
f = 2620 MHz
44
43
f = 2570 MHz
f = 2620 MHz
f = 2570 MHz
42
41
24 25 26 27 28 29 30 31 32 33 34 35
P_in, INPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
f
(MHz)
2570
2595
2620
P1dB
Watts dBm
50
47.0
51
47.1
49
46.9
P3dB
Watts dBm
61.7
47.9
60.3
47.8
60.3
47.8
Test Impedances per Compression Level
f
(MHz)
Z_source
Ω
Z_load
Ω
2570
P1dB 15.3 -- j13.5 3.65 -- j6.25
2595
P1dB 17.4 -- j12.6 4.26 -- j5.53
2620
P1dB 18.0 -- j10.3 4.09 -- j5.62
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P26080HR3 MRF8P26080HSR3
8
RF Device Data
Freescale Semiconductor