MRF8P26080H Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 7.5 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0 1 2 3 4 5 6 7 8 9 10
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
--50
--60 --ACPR in 3.84 MHz
Integrated BW
--70
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
f
MHz
V_DD = 28 Vdc, I_DQA = 300 mA
Max P_out ⁽¹⁾
Watts dBm
Z_source
Ω
Z_load
Ω
2570
50
47.0
15.3 -- j13.5 3.65 -- j6.25
2595
51
47.1
17.4 -- j12.6 4.26 -- j5.53
2620
49
46.9
18.0 -- j10.3 4.09 -- j5.62
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Z_source = Test circuit impedance as measured from gate contact to
ground.
Z_load = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
f
MHz
V_DD = 28 Vdc, I_DQA = 300 mA
Max Eff. ⁽¹⁾
%
Z_source
Ω
Z_load
Ω
2570
46.2
15.3 -- j13.5
6.67 -- j2.44
2595
45.8
17.4 -- j12.6
6.34 -- j2.10
2620
46.4
18.0 -- j10.3
6.16 -- j2.49
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Z_source = Test circuit impedance as measured from gate contact to
ground.
Z_load = Test circuit impedance as measured from drain contact to
ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 11. Carrier Side Load Pull Performance —
Maximum P1dB Tuning
Z _source
Z _load
Figure 12. Carrier Side Load Pull Performance —
Maximum Efficiency Tuning
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
7