MRF8P26080H Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V_DD = 28 Volts, I_DQA = 300 mA, V_GSB = 1.3 Vdc, P_out = 14 Watts Avg., IQ
Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR =
7.5 dB @ 0.01% Probability on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
2570 MHz
2595 MHz
2620 MHz
15.4
39.1
15.2
38.2
15.0
36.9
6.8
--33.6
6.8
--36.0
6.8
--40.0
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2595 MHz, 109 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 83 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 13.
Document Number: MRF8P26080H
Rev. 0, 12/2010
MRF8P26080HR3
MRF8P26080HSR3
2500--2700 MHz, 14 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8P26080HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P26080HSR3
RF_inA/V_GSA 3
RF_inB/V_GSB 4
1 RF_outA/V_DSA
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
140
1.26
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
1