MRF8P26080H Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances ⁽¹⁾ (In Freescale Doherty Characterization Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQA = 300 mA,
V_GSB = 1.3 Vdc, 2570--2620 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
P1dB
—
54
—
P_out @ 3 dB Compression Point, CW
P3dB
—
83
—
IMD Symmetry @ 12 W PEP, P_out where IMD Third Order
Intermodulation  30 dBc
IMD_sym
—
40
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
70
—
Gain Flatness in 50 MHz Bandwidth @ P_out = 14 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
G_F
—
0.5
—
∆G
—
0.01
—
Output Power Variation over Temperature
(--30°C to +85°C)
∆P1dB
—
0.002
—
1. Measurement made with device in a Symmetrical Doherty configuration.
Unit
W
W
MHz
MHz
dB
dB/°C
dB/°C
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
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