MRF8P26080H Datasheet, PDF (5/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
45
15.5
V_DD = 28 Vdc, P_out = 14 W (Avg.)
I_DQA = 300 mA, V_GSB = 1.3 Vdc
40
15
14.5 _{Single--Carrier W--CDMA}
35
η_{D 30}
14 ^{3.84 MHz Channel Bandwidth}
Input Signal PAR = 7.5 dB @ 0.01%
G_ps
13.5 _{Probability on CCDF}
25
--25
--0.5
13
--30
--0.7
12.5
ACPR
--35
--0.9
12
--40
--1.1
11.5
PARC
--45
--1.3
11
--50
--1.5
2570 2590 2610 2630 2650 2670 2690 2710 2730
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P_out = 14 Watts Avg.
--20
IM3--L
--30
IM3--U
--40
V_DD = 28 Vdc, P_out = 12 W (PEP), I_DQA = 300 mA
V_GSB = 1.3 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2595 MHz
--50
--60
IM5--U _IM5--L
IM7--U
IM7--L
--70
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
17
0
16
--1
70
--10
V_DD = 28 Vdc, I_DQA = 300 mA, V_GSB = 1.3 Vdc
f = 2595 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
60
--15
PAR = 7.5 dB @ 0.01% Probability on CCDF
15
--2
--1 dB = 15.5 W
η_D
50
--20
14
--3
40
--25
--2 dB = 20.5 W
13
--4
--3 dB = 26.5 W
G_ps
30
--30
12
--5
ACPR
PARC
20
--35
11
--6
10
--40
5
15
25
35
45
55
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor
MRF8P26080HR3 MRF8P26080HSR3
5