MRF6S21190HR3 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f = 2220 MHz
Z_load
f = 2060 MHz
Z_o = 10 Ω
Z_source
f = 2220 MHz
f = 2060 MHz
V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 54 W Avg.
f
MHz
Z_source
W
Z_load
W
2060
7.001 - j7.706
2.628 + j0.118
2080
6.859 - j7.408
2.602 + j0.415
2100
6.710 - j7.052
2.604 + j0.672
2120
6.573 - j6.707
2.566 + j0.901
2140
6.446 - j6.355
2.536 + j1.175
2160
6.339 - j5.987
2.538 + j1.411
2180
6.251 - j5.653
2.547 + j1.654
2200
6.170 - j5.272
2.533 + j1.892
2220
6.138 - j4.974
2.508 + j2.119
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21190HR3 MRF6S21190HSR3
8
RF Device Data
Freescale Semiconductor