MRF6S21190HR3 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
−20
V_DD = 28 Vdc, I_DQ = 1600 mA
f1 = 2135 MHz, f2 = 2145 MHz
−30 _{Two−Tone Measurements, 10 MHz Tone Spacing}
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−10
V_DD = 28 Vdc, P_out = 175 W (PEP), I_DQ = 1600 mA
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 2140 MHz
−30
−40
IM7−L
−50
IM7−U
IM3−U
IM3−L
IM5−U
IM5−L
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
45
Ideal
0
40
−1
35
−1 dB = 43.79 W
−2
30
−2 dB = 65.39 W
−3
25
η_D
−3 dB = 85.07 W _Actual
−4
V_DD = 28 Vdc, I_DQ = 1600 mA, f = 2140 MHz
20
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
−5
15
20
30
40
50
60
70
80 90
P_out, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
19
18
G_ps
17
16
T_C = −30_C
25_C
85_C
60
−30_C
25_C
50
40
85_C
30
15
20
14
η_D
13
1
V_DD = 28 Vdc
10
I_DQ = 1600 mA
f = 2140 MHz
0
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21190HR3 MRF6S21190HSR3
6
17
16
32 V
28 V
15
14
I_DQ = 1600 mA
f = 2140 MHz
13
0
V_DD = 24 V
100
200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor