MRF6S21190HR3 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 420 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 1600 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 4.2 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Equivalent Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 28 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
2
2.8
4
Vdc
V_DS(on)
0.12
0.21
0.31
Vdc
C_rss
—
2.8
—
pF
C_out
—
185
—
pF
C_iss
—
526
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G_ps
14.5
16
17.5
dB
Drain Efficiency
η_D
26
29
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
PAR
5.5
6.1
—
dB
Adjacent Channel Power Ratio
ACPR
—
- 38
- 35
dBc
Input Return Loss
IRL
—
- 13
-8
dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1600 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 175 W PEP P_out where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ P_out = 54 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P_out = 175 W CW
Average Group Delay @ P_out = 175 W CW, f = 2140 MHz
Part - to - Part Insertion Phase Variation @ P_out = 175 W CW,
f = 2140 MHz
G_F
—
0.16
—
dB
Φ
—
0.52
—
°
Delay
—
2.1
—
ns
ΔΦ
—
28
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
1. Part internally matched both on input and output.
MRF6S21190HR3 MRF6S21190HSR3
2
RF Device Data
Freescale Semiconductor