MRF6S21190HR3 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
18.5
34
18
32
17.5 ^ηD
30
17
V_DD = 28 Vdc, P_out = 54 W (Avg.), I_DQ = 1600 mA
28
16.5 _Gps
26
16
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth 0
−4
15.5
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) _−0.5
−8
15 ^IRL
−1
−12
14.5 _PARC
14
−1.5
−16
−2
−20
13.5
−2.5
−24
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 54 Watts Avg.
17
42
16.5
40
G_ps
16
38
15.5 ^ηD
36
15
V_DD = 28 Vdc, P_out = 86 W (Avg.), I_DQ = 1600 mA
34
14.5
IRL
Single−Carrier W−CDMA, 3.84 MHz Channel Banwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
−2
−5
14
−2.5
−10
13.5 ^PARC
−3
−15
13
−3.5
−20
12.5
−4
−25
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ P_out = 86 Watts Avg.
18
I_DQ = 2400 mA
17
2000 mA
16 ^{1600 mA}
15 _{1200 mA}
14
800 mA
13
1
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
−20
I_DQ = 800 mA
−30
1200 mA
−40
2400 mA
2000 mA
1600 mA
−50
−60
1
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21190HR3 MRF6S21190HSR3
5