MRF6S21190HR3 Datasheet, PDF (10/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Feb. 2008
Mar. 2008
Description
• Initial Release of Data Sheet
• Added Fig. 12, MTTF versus Junction Temperature, p. 7
MRF6S21190HR3 MRF6S21190HSR3
10
RF Device Data
Freescale Semiconductor