MRF6S21100NR1_08 Datasheet, PDF (8/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 5 Ω
f = 2170 MHz
Z_source
f = 2110 MHz
f = 2170 MHz
Z_load f = 2110 MHz
Z_o = 5 Ω
f = 2170 MHz
Z_source
f = 2110 MHz
f = 2170 MHz
Z_load
f = 2110 MHz
MRF6S21100NR1
V_DD = 28 Vdc, I_DQ = 1050 mA, P_out = 23 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2110
3.51 - j3.78
1.62 - j3.54
2140
3.50 - j3.83
1.51 - j3.26
2170
3.29 - j3.78
1.41 - j2.95
MRF6S21100NBR1
V_DD = 28 Vdc, I_DQ = 1050 mA, P_out = 23 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
3.56 - j3.92
3.55 - j3.97
1.62 - j3.47
1.53 - j3.19
2170
3.34 - j3.90
1.44 - j2.89
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100NR1 MRF6S21100NBR1
8
RF Device Data
Freescale Semiconductor