MRF6S21100NR1_08 Datasheet, PDF (5/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15
V_DD = 28 Vdc, P_out = 22.5 W (Avg.), I_DQ = 1050 mA
28
14.8
2-Carrier W-CDMA, 10 MHz Carrier Spacing
27
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
14.6
@ 0.01% Probability (CCDF)
26
η_D
14.4
25
14.2
G_ps
14
24
-31
-9
13.8
IM3
-34
-10
13.6
-37
-1 1
13.4
ACPR
-40
-12
13.2
-43
-13
13
IRL
-46
-14
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P_out = 22.5 Watts Avg.
14.2
38
14 _ηD
37
13.8
36
13.6
35
13.4 ^Gps
V_DD = 28 Vdc, P_out = 45 W (Avg.), I_DQ = 1050 mA
34
2-Carrier W-CDMA, 10 MHz Carrier Spacing
13.2
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
-24
-9
13
IM3
@ 0.01% Probability (CCDF)
-26
-10
12.8
-28
-1 1
12.6
ACPR
-30
-12
12.4
-32
-13
12.2
IRL
-34
-14
2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P_out = 45 Watts Avg.
16
I_DQ = 1575 mA
15 ^{1312 mA}
1050 mA
14
787 mA
13
12
525 mA
11
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
10
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
-1 0
V_DD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
-3 0
1575 mA
I_DQ = 525 mA
-4 0
1312 mA
-5 0
1050 mA
787 mA
-60
0.1
1
10
100 300
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
5