MRF6S21100NR1_08 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate-Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 330 μAdc)
Gate Quiescent Voltage
(V_DS = 28 Vdc, I_D = 1050 mAdc)
Fixture Gate Quiescent Voltage ⁽¹⁾
(V_DD = 28 Vdc, I_D = 1050 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V_GS = 10 Vdc, I_D = 3.3 Adc)
Dynamic Characteristics ⁽²⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
—
2.8
—
Vdc
V_GG(Q)
2.2
3.1
4.4
Vdc
V_DS(on)
—
0.24
—
Vdc
C_rss
—
1.5
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1050 mA, P_out = 23 W Avg., f1 = 2112.5 MHz, f2 =
2157.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
13
14.5
16
dB
Drain Efficiency
η_D
24
25.5
36
%
Intermodulation Distortion
IM3
-47
-37
-35
dBc
Adjacent Channel Power Ratio
ACPR
-50
-40
-38
dBc
Input Return Loss
IRL
—
-12
-10
dB
ăĂ1. V_GG = 11/10 x V_GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
Ăă2. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
2
RF Device Data
Freescale Semiconductor