MRF6S21100NR1_08 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
0
V_DD = 28 Vdc, P_out = 100 W (PEP)
-1 0 ^{IDQ = 1050 mA, Two-Tone Measurements}
(f1 + f2)/2 = Center Frequency of 2140 MHz
-2 0
-3 0 3rd Order
-4 0 5th Order
-5 0
7th Order
-60
0.1
1
10
100 300
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
56
P3dB = 51.9 dBm (156.3 W)
54
P1dB = 51.3 dBm (135.8 W)
52
Ideal
Actual
50
V_DD = 28 Vdc, I_DQ = 1050 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
48
32
34
36
38
40
42
44
46
P_in, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
40
-20
V_DD = 28 Vdc, I_DQ = 1050 mA, f1 = 2135 MHz -30 _C
35 f2 = 2145 MHz, 2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
30 _{Channel Bandwidth, PAR = 8.5 dB}
η_D
25_C
25_C
-25
-30 _C ^-30
@ 0.01% Probability (CCDF)
25
85_C
ACPR
-35
20
T_C = 25_C
G_ps
IM3
-40
15
-45
-30 _C
10
-50
5
25_C
85_C
-55
0
0.5 1
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
-60
100
18
V_DD = 28 Vdc
17 ^IDQ ^{= 1050 mA}
f = 2140 MHz
16
T_C = -30_C
15
25_C
14
85_C
13
70
-30 _C
G_ps
60
25_C
50
85_C ₄₀
30
20
12
11
0.1
η_D
1
10
0
10
100 300
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S21100NR1 MRF6S21100NBR1
6
15
14
13
12
32 V
11
28 V
V_DD = 24 V
10
I_DQ = 1050 mA
f = 2140 MHz
9
0 20 40 60 80 100 120 140 160 180 200
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor