MRF6S21100NR1_08 Datasheet, PDF (12/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 10 Ω
f = 2070 MHz
f = 1950 MHz
Z_load
f = 2070 MHz
f = 1950 MHz
Z_source
f
MHz
V_DD = 28 Vdc, I_DQ = 900 mA
Z_source
W
Z_load
W
1950
1.43 - j4.56
3.61 - j4.19
1960
1.57 - j4.80
3.86 - j4.40
1970
1.72 - j5.12
4.18 - j4.62
1980
1.65 - j5.27
4.21 - j4.81
1990
1.48 - j4.98
3.91 - j4.59
2000
1.38 - j4.45
3.56 - j4.07
2010
1.35 - j4.01
3.31 - j3.62
2020
1.30 - j3.57
3.14 - j3.40
2030
1.21 - j3.62
2.99 - j3.31
2040
1.25 - j3.61
3.02 - j3.31
2050
1.34 - j3.76
3.19 - j3.44
2060
1.37 - j4.08
3.38 - j3.75
2070
1.24 - j4.24
3.33 - j3.99
Z_source = Device input impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA
MRF6S21100NR1 MRF6S21100NBR1
12
RF Device Data
Freescale Semiconductor