MRF5S19060NR1_08 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

f = 1990 MHz
Z_load
f = 1930 MHz
f = 1990 MHz _Zsource
f = 1930 MHz
Z_o = 5 Ω
V_DD = 28 Vdc, I_DQ = 750 mA, P_out = 12 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
1930
1960
1990
3.11 - j4.55
3.06 - j4.38
2.93 - j4.28
2.60 - j3.18
2.50 - j2.85
2.44 - j2.53
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S19060NR1 MRF5S19060NBR1
8
RF Device Data
Freescale Semiconductor