MRF5S19060NR1_08 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
14.8
24
14.6
14.4
V_DD = 28 Vdc, P_out = 12 W (Avg.), I_DQ = 750 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
14.2 ^{@ 0.01% Probability (CCDF)}
η_D ²³
22
G_ps
IM3 ^−35
−5
14
IRL
−41
−10
13.8
−47
−15
ACPR
13.6
−53
−20
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 12 Watts Avg.
14.2
39
14
37
η_D
13.8 _{VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA}
G_ps
35
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
13.6
IM3 _−25
−5
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
13.4 ^{@ 0.01% Probability (CCDF)}
IRL
−31
−10
13.2
ACPR ^−37
−15
13
−43
−20
1900
1920 1940
1960 1980
2000 2020
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 30 Watts Avg.
17
16 ^{IDQ = 1150 mA}
950 mA
15
750 mA
V_DD = 28 Vdc
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
14
550 mA
13
350 mA
12
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−15
V_DD = 28 Vdc
−20
f1 = 1960 MHz, f2 = 1962.5 MHz
Two−Tone Measurements,
−25
2.5 MHz Tone Spacing
−30 _{IDQ = 350 mA}
−35
1150 mA
−40
−45
−50
550 mA
−55
950 mA
750 mA
−60
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
5