MRF5S19060NR1_08 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−10
−15
V_DD = 28 Vdc, P_out = 12 W (Avg.), I_DQ = 750 mA
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 1960 MHz
−25
−30 ^{3rd Order}
−35
−40 _{5th Order}
−45
7th Order
−50
−55
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
54
53
P3dB = 49.4 dBm (87 W)
Ideal
52
51 ^{P1dB = 48.65 dBm (73.3 W)}
50
Actual
49
48
47
46
V_DD = 28 Vdc, I_DQ = 750 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
45
f = 1960 MHz
44
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
40
V_DD = 28 Vdc, I_DQ = 750 mA
T_C = −30_C
35 _{f1 = 1960 MHz, f2 = 1962.5 MHz}
25_C
85_C
−10
η_D
−20
2−Carrier N−CDMA, 2.5 MHz Carrier
30 _{Spacing, 1.2288 MHz Channel}
25
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
20
G_ps
15
85_C
25_C
−30_C
IM3 _−30
−40
85_C _{25_C}
ACPR
−50
−30_C
−30_C
−60
25_C
10
85_C
−70
5
−80
0
−90
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
16
T_C = −30_C
15
25_C
60
25_C
−30_C
50
14
85_C
13 _{VDD = 28 Vdc}
I_DQ = 750 mA
η_D
12 f = 1960 MHz
40
85_C
30
20
11
G_ps ¹⁰
10
0
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF5S19060NR1 MRF5S19060NBR1
6
16
15
V_DD = 32 V
14
13
28 V
12
11
I_DQ = 750 mA
24 V
f = 1960 MHz
10
30
50
70
90
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor