MRF5S19060NR1_08 Datasheet, PDF(2/16 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S19060NR1_08 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1C (Minimum)

Machine Model (per EIA/JESD22 - A115)

C (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

260

Â°C

Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

Î¼Adc

IDSS

Î¼Adc

IGSS

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 225 Î¼Adc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 750 mAdc)

Drain- Source On - Voltage

(VGS = 5 Vdc, ID = 2.25 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2.25 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

VGS(th)

2.5

3.5

Vdc

VGS(Q)

3.8

Vdc

VDS(on)

0.26

Vdc

gfs

Crss

1.5

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1987.5 MHz,

f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ Â±885 kHz

Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ Â±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

12.5

Drain Efficiency

Î·D

Intermodulation Distortion

IM3

- 37

- 35

dBc

Adjacent Channel Power Ratio

ACPR

- 51

- 48

dBc

Input Return Loss

IRL

- 12

-9

Typical RF Performance (50 ohm system)

Pulse Peak Power

(VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 Î¼s,

1% Duty Cycle)

Psat

110

Video Bandwidth

(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing =

1 MHz to VBW, Î IM3<2dB)

VBW

MHz

1. Part is internally matched both on input and output.

MRF5S19060NR1 MRF5S19060NBR1

RF Device Data

Freescale Semiconductor

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