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MRF5S19060NR1_08 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
109
108
107
106
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
10
1
0.1
0.01
0.001
0.0001
0
ISâ95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
2
4
6
8
PEAKâTOâAVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
0
1.2288 MHz
â10
Channel BW
â20
âIM3 in
â30
1.2288 MHz
Integrated BW
â40
+IM3 in
1.2288 MHz
Integrated BW
â50
â60
â70
â80
10
â90
âACPR in 30 kHz +ACPR in 30 kHz
Integrated BW
Integrated BW
â100
â7.5 â6 â4.5 â3 â1.5 0 1.5 3 4.5
6 7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
7
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