MRF18060ALR3_08 Datasheet, PDF (8/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PACKAGE DIMENSIONS
B
B
(FLANGE)
H
E
A
G
1
2
D
bbb M T A M
A
(FLANGE)
2X Q
bbb M T A M
3
K
BM
M (INSULATOR)
bbb M T A M B M
N (LID)
ccc M T A M B M
C
T
SEATING
PLANE
BM
ccc M
aaa M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
R (LID)
T A M BM
S (INSULATOR)
T A M BM
F
INCHES
DIM MIN MAX
A 1.335 1.345
B 0.380 0.390
C 0.125 0.170
D 0.495 0.505
E 0.035 0.045
F 0.003 0.006
G 1.100 BSC
H 0.057 0.067
K 0.170 0.210
M 0.774 0.786
N 0.772 0.788
Q .118 .138
R 0.365 0.375
S 0.365 0.375
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
33.91 34.16
9.65 9.91
3.18 4.32
12.57 12.83
0.89 1.14
0.08 0.15
27.94 BSC
1.45 1.70
4.32 5.33
19.66 19.96
19.60 20.00
3.00 3.51
9.27 9.53
9.27 9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE G
NI - 780
MRF18060ALR3
MRF18060ALR3
8
RF Device Data
Freescale Semiconductor