MRF18060ALR3_08 Datasheet, PDF (7/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 5 Ω
Z_load
f = 2100 MHz
f = 1700 MHz
f = 1700 MHz
Z_source
f = 2100 MHz
V_DD = 26 V, I_DQ = 500 mA, P_out = 60 W CW
f
MHz
Z_source
Ω
Z_load
Ω
1700
1800
0.60 - j2.53
0.80 - j3.20
2.27 - j3.44
2.05 - j3.05
1900
0.92 - j3.42
1.90 - j2.90
2000
1.07 - j3.59
1.64 - j2.88
2100
1.31 - j4.00
1.29 - j2.99
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 10. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF18060ALR3
7