MRF18060ALR3_08 Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain - Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
65
I_DSS
—
I_GSS
—
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 500 mAdc)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
2
V_GS(Q)
2.5
V_DS(on)
—
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package) ⁽¹⁾
C_iss
—
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance ⁽¹⁾
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_oss
—
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common - Source Amplifier Power Gain @ 60 W
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1805 MHz)
Drain Efficiency @ 60 W
(V_DD = 26 Vdc, I_DQ = 500 mA, f = 1805 MHz)
Input Return Loss
(V_DD = 26 Vdc, P_out = 60 W CW, I_DQ = 500 mA, f = 1805 MHz)
1. Part is internally matched both on input and output.
G_ps
11.5
η
43
IRL
—
Typ
—
—
—
—
3.9
0.27
160
740
2.7
13
45
—
Max
Unit
—
Vdc
6
μAdc
1
μAdc
4
Vdc
4.5
Vdc
—
Vdc
—
pF
—
pF
—
pF
—
dB
—
%
- 10
dB
MRF18060ALR3
2
RF Device Data
Freescale Semiconductor