MRF18060ALR3_08 Datasheet, PDF (6/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
15
14 ^{IDQ = 750 mA}
13
500 mA
12
11 ^{300 mA}
10
100 mA
9
8
1
V_DD = 26 Vdc
f = 1880 MHz
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
100
90
80
P_in = 5 W
70
60
50
40
30
20
10
0
18
2.5 W
1W
V_DD = 26 Vdc
I_DQ = 500 mA
20
22
24
26
28
30
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
90
80
P_in = 6 W
70
60
50
40
30
20
10
0
1800
3W
1W
0.5 W
V_DD = 26 Vdc
I_DQ = 500 mA
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
Figure 7. Output Power versus Frequency
90
60
80
55
70
50
h
60
45
50
P_out
40
40
35
30
30
20
V_DD = 26 Vdc
25
I_DQ = 500 mA
10
f = 1880 MHz
20
0
15
0
1
2
3
4
5
6
P_in, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency
versus Input Power
15.0
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
1700
G_ps
IRL
V_DD = 26 Vdc
I_DQ = 500 mA
1800
1900
2000
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
0
−2
−4
−6
−8
−10
−12
−14
−16
−18
−20
2100
MRF18060ALR3
6
RF Device Data
Freescale Semiconductor