MRF18060ALR3_08 Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical GSM Performance @ 1805 MHz
Power Gain — 13 dB @ 60 Watts
Efficiency — 45% @ 60 Watts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF18060A
Rev. 11, 10/2008
MRF18060ALR3
1805 - 1880 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465 - 06, STYLE 1
NI - 780
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C ≥ 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
180
1.03
- 65 to +150
150
200
Value
0.97
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF18060ALR3
1