MRF1517NT1_08 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 440 - 480 MHz
17
440 MHz
15
460 MHz
13
480 MHz
11
9
7
V_DD = 7.5 Vdc
5
1 2 3 4 5 6 7 8 9 10
P_out, OUTPUT POWER (WATTS)
Figure 22. Gain versus Output Power
70
60
460 MHz
480 MHz
50
440 MHz
40
30
20
10
V_DD = 7.5 Vdc
0
1 2 3 4 5 6 7 8 9 10 11
P_out, OUTPUT POWER (WATTS)
Figure 23. Drain Efficiency versus Output Power
12
10
440 MHz
8
480 MHz
460 MHz
6
4
2
P_in = 27.5 dBm
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 24. Output Power versus Biasing Current
80
70
480 MHz
60
460 MHz
440 MHz
50
40
P_in = 27.5 dBm
30
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 25. Drain Efficiency versus Biasing Current
12
10
440 MHz
8
460 MHz
480 MHz
6
4
2
0
5
6
P_in = 27.5 dBm
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus Supply Voltage
80
70
60
460 MHz
440 MHz
50
480 MHz
40
P_in = 27.5 dBm
30
5
6
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 27. Drain Efficiency versus Supply Voltage
MRF1517NT1
8
RF Device Data
Freescale Semiconductor