MRF1517NT1_08 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

520
Z_in
f = 480 MHz
520
f = 480 MHz
Z_OL*
Z_o = 10 Ω
f = 440 MHz ^Zin
480
Z_OL* ₄₄₀
f = 480 MHz
Z_o = 10 Ω
f = 440 MHz
Z_in
400
f = 440 MHz
Z_OL*
400
Z_o = 10 Ω
V_DD = 7.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
480 1.06 +j1.82 3.51 +j0.99
500 0.97 +j2.01 2.82 +j0.75
520 0.975 +j2.37 1.87 +j1.03
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and η_D > 50 %.
V_DD = 7.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
440 1.62 +j3.41 3.25 +j0.98
460 1.85 +j3.35 3.05 +j0.93
480 1.91 +j3.31 2.54 +j0.84
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and η_D > 50 %.
V_DD = 7.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
400
1.96 +j3.32 2.52 +j0.39
420
2.31 +j3.56 2.61 +j0.64
440
1.60 +j3.45 2.37 +j1.04
Z_in = Complex conjugate of source
impedance.
Z_OL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 29. Series Equivalent Input and Output Impedance
MRF1517NT1
10
RF Device Data
Freescale Semiconductor