MRF1517NT1_08 Datasheet, PDF(2/16 Page) Freescale Semiconductor, Inc

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MRF1517NT1_08 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 35 Vdc, VGS = 0)

Gate - Source Leakage Current

(VGS = 10 Vdc, VDS = 0)

IDSS

IGSS

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 7.5 Vdc, ID = 120 Î¼Adc)

VGS(th)

1.7

2.1

Vdc

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

0.5

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

gfs

0.9

Ciss

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

Crss

Functional Tests (In Freescale Test Fixture)

Common - Source Amplifier Power Gain

(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

Drain Efficiency

(VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

Gps

Î·

MRF1517NT1

RF Device Data

Freescale Semiconductor

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