MRF1517NT1_08 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 400 - 440 MHz
17
420 MHz
15
400 MHz
440 MHz
13
11
9
7
V_DD = 7.5 Vdc
5
1 2 3 4 5 6 7 8 9 10
P_out, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
70
60
440 MHz
50
420 MHz
40
400 MHz
30
20
10
V_DD = 7.5 Vdc
0
1 2 3 4 5 6 7 8 9 10 11
P_out, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output Power
12
10
400 MHz
420 MHz
8
440 MHz
6
4
2
P_in = 25.5 dBm
V_DD = 7.5 Vdc
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 15. Output Power versus Biasing Current
80
70
440 MHz
60
420 MHz
400 MHz
50
40
P_in = 25.5 dBm
V_DD = 7.5 Vdc
30
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus Biasing Current
12
10
400 MHz
420 MHz
8
440 MHz
6
4
2
P_in = 25.5 dBm
I_DQ = 150 mA
0
5
6
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus Supply Voltage
80
70
420 MHz
60
440 MHz
50
400 MHz
40
P_in = 25.5 dBm
I_DQ = 150 mA
30
5
6
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus Supply Voltage
MRF1517NT1
6
RF Device Data
Freescale Semiconductor