MRF1517NT1_08 Datasheet, PDF (11/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 5. Common Source Scattering Parameters (V_DD = 7.5 Vdc)
I_DQ = 150 mA
f
MHz
50
S₁₁
|S₁₁|
∠φ
0.84
- 152
S₂₁
|S₂₁|
∠φ
17.66
97
100
0.84
- 164
8.86
85
200
0.86
- 170
4.17
72
300
0.88
- 171
2.54
62
400
0.90
- 172
1.72
55
500
0.92
- 172
1.28
50
600
0.94
- 173
0.98
46
700
0.95
- 173
0.76
41
800
0.96
- 174
0.61
38
900
0.96
- 175
0.50
33
1000
0.97
- 175
0.40
31
S₁₂
|S₁₂|
∠φ
0.016
0
0.016
5
0.015
-5
0.014
-8
0.013
- 25
0.013
- 10
0.014
- 22
0.010
- 30
0.011
- 14
0.011
- 31
0.006
55
f
MHz
50
100
200
300
400
500
600
700
800
900
1000
S₁₁
|S₁₁|
∠φ
0.90
- 165
0.89
- 172
0.90
- 175
0.90
- 176
0.91
- 176
0.92
- 176
0.93
- 176
0.94
- 176
0.94
- 176
0.95
- 177
0.96
- 177
I_DQ = 800 mA
S₂₁
S₁₂
|S₂₁|
∠φ
|S₁₂|
∠φ
20.42
94
0.018
1
10.20
87
0.015
-7
4.96
79
0.015
- 12
3.17
73
0.017
-2
2.26
67
0.013
1
1.75
63
0.011
-6
1.39
59
0.012
- 31
1.14
55
0.015
- 34
0.93
51
0.008
- 22
0.78
45
0.007
2
0.65
43
0.008
- 40
f
MHz
50
100
200
300
400
500
600
700
800
900
1000
S₁₁
|S₁₁|
∠φ
0.92
- 165
0.90
- 172
0.91
- 176
0.91
- 176
0.92
- 176
0.93
- 176
0.94
- 176
0.94
- 176
0.95
- 176
0.96
- 177
0.97
- 177
|S₂₁|
19.90
9.93
4.84
3.10
2.22
1.73
1.39
1.12
0.93
0.78
0.64
I_DQ = 1.5 A
S₂₁
∠φ
95
88
80
74
68
64
61
56
52
46
44
S₁₂
|S₁₂|
∠φ
0.017
3
0.018
2
0.016
-4
0.014
- 11
0.014
- 14
0.016
-8
0.013
- 24
0.013
- 24
0.009
- 12
0.008
10
0.012
4
S₂₂
|S₂₂|
∠φ
0.77
- 167
0.78
- 172
0.79
- 173
0.80
- 172
0.83
- 172
0.84
- 172
0.86
- 171
0.86
- 172
0.86
- 171
0.85
- 172
0.88
- 171
S₂₂
|S₂₂|
∠φ
0.76
- 164
0.77
- 170
0.77
- 172
0.80
- 171
0.82
- 172
0.83
- 171
0.85
- 171
0.88
- 171
0.87
- 171
0.87
- 172
0.90
- 170
S₂₂
|S₂₂|
∠φ
0.76
- 164
0.77
- 170
0.77
- 172
0.80
- 172
0.81
- 172
0.83
- 171
0.85
- 171
0.87
- 171
0.87
- 171
0.87
- 173
0.89
- 169
RF Device Data
Freescale Semiconductor
MRF1517NT1
11