MRF1513NT1_08 Datasheet, PDF (8/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 135 - 175 MHz
18
135 MHz
17
155 MHz
175 MHz
16
15
14
13
V_DD = 12.5 Vdc
12
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 22. Gain versus Output Power
70
135 MHz
60
155 MHz
50
175 MHz
40
30
20
V_DD = 12.5 Vdc
10
0
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 23. Drain Efficiency versus Output
Power
6
175 MHz
5
155 MHz
4
135 MHz
3
V_DD = 12.5 Vdc
P_in = 19.5 dBm
2
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 24. Output Power versus
Biasing Current
5
4
3
175 MHz
2
155 MHz
135 MHz
1
P_in = 19.5 dBm
I_DQ = 50 mA
0
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 26. Output Power versus
Supply Voltage
80
75
175 MHz
70
155 MHz
65
135 MHz
60
55
V_DD = 12.5 Vdc
P_in = 19.5 dBm
50
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 25. Drain Efficiency versus
Biasing Current
80
70
135 MHz _{175 MHz}
60
155 MHz
50
40
30
P_in = 19.5 dBm
I_DQ = 50 mA
20
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 27. Drain Efficiency versus
Supply Voltage
MRF1513NT1
8
RF Device Data
Freescale Semiconductor