MRF1513NT1_08 Datasheet, PDF (11/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 5. Common Source Scattering Parameters (V_DD = 12.5 Vdc)
I_DQ = 50 mA
f
MHz
S₁₁
|S₁₁|
∠φ
S₂₁
|S₂₁|
∠φ
50
0.93
- 94
22.09
125
100
0.81
- 131
12.78
101
200
0.76
- 153
6.31
81
300
0.76
- 160
3.92
69
400
0.77
- 164
2.74
60
500
0.79
- 167
1.99
54
600
0.80
- 169
1.55
48
700
0.81
- 171
1.25
44
800
0.82
- 172
1.02
38
900
0.83
- 173
0.85
35
1000
0.84
- 175
0.70
29
S₁₂
|S₁₂|
∠φ
0.044
33
0.052
6
0.047
- 10
0.044
- 19
0.040
- 26
0.036
- 31
0.034
- 37
0.028
- 40
0.027
- 42
0.017
- 42
0.018
- 49
f
MHz
50
100
200
300
400
500
600
700
800
900
1000
S₁₁
|S₁₁|
∠φ
0.84
- 127
0.80
- 152
0.78
- 166
0.78
- 171
0.78
- 173
0.78
- 175
0.79
- 176
0.79
- 177
0.80
- 178
0.81
- 178
0.82
- 179
I_DQ = 500 mA
S₂₁
S₁₂
|S₂₁|
∠φ
|S₁₂|
∠φ
32.57
112
0.025
17
17.23
97
0.025
13
8.62
85
0.025
-9
5.58
79
0.023
-9
4.08
72
0.022
-9
3.14
68
0.020
- 10
2.55
63
0.022
- 15
2.14
60
0.019
- 20
1.80
54
0.018
- 31
1.54
51
0.015
- 25
1.31
46
0.012
- 36
f
MHz
50
100
200
300
400
500
600
700
800
900
1000
S₁₁
|S₁₁|
∠φ
0.84
- 129
0.80
- 153
0.78
- 167
0.77
- 172
0.77
- 174
0.78
- 175
0.78
- 177
0.78
- 177
0.79
- 178
0.80
- 178
0.80
- 179
|S₂₁|
32.57
17.04
8.52
5.53
4.06
3.13
2.54
2.13
1.81
1.54
1.30
I_DQ = 1 A
S₂₁
∠φ
111
97
85
79
73
69
64
60
55
51
46
S₁₂
|S₁₂|
∠φ
0.023
24
0.024
13
0.023
5
0.020
-7
0.020
- 11
0.021
-9
0.017
- 26
0.017
- 14
0.015
- 23
0.013
- 31
0.011
- 17
S₂₂
|S₂₂|
∠φ
0.77
- 81
0.61
- 115
0.59
- 135
0.64
- 142
0.70
- 147
0.75
- 151
0.80
- 155
0.82
- 158
0.86
- 161
0.88
- 163
0.91
- 166
S₂₂
|S₂₂|
∠φ
0.64
- 130
0.64
- 153
0.65
- 163
0.67
- 166
0.69
- 166
0.71
- 167
0.74
- 168
0.76
- 168
0.79
- 170
0.80
- 170
0.81
- 172
S₂₂
|S₂₂|
∠φ
0.61
- 137
0.64
- 156
0.65
- 165
0.67
- 167
0.69
- 167
0.72
- 167
0.74
- 168
0.75
- 168
0.78
- 170
0.79
- 170
0.80
- 172
RF Device Data
Freescale Semiconductor
MRF1513NT1
11