MRF1513NT1_08 Datasheet, PDF (15/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
10
Date
Feb. 2008
Description
• Changed DC Bias I_DQ value from 150 to 50 to match Functional Test I_DQ specification, p. 12
• Added Product Documentation and Revision History, p. 15
RF Device Data
Freescale Semiconductor
MRF1513NT1
15