MRF1513NT1_08 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 400 - 470 MHz
18
17 ^{470 MHz}
16
440 MHz
400 MHz
15
14
13
V_DD = 12.5 Vdc
12
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
70
470 MHz
60
400 MHz
50
440 MHz
40
30
20
V_DD = 12.5 Vdc
10
0
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output
Power
6
400 MHz
5
440 MHz
4
470 MHz
3
2
V_DD = 12.5 Vdc
P_in = 18.7 dBm
1
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 15. Output Power versus
Biasing Current
5
400 MHz 440 MHz
4
470 MHz
3
2
1
P_in = 18.7 dBm
I_DQ = 50 mA
0
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus
Supply Voltage
70
65 470 MHz
60 _{440 MHz}
55
400 MHz
50
45
V_DD = 12.5 Vdc
P_in = 18.7 dBm
40
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus
Biasing Current
80
70
470 MHz
60
440 MHz
50
400 MHz
40
30
P_in = 18.7 dBm
I_DQ = 50 mA
20
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus
Supply Voltage
MRF1513NT1
6
RF Device Data
Freescale Semiconductor