MRF1513NT1_08 Datasheet, PDF (10/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Z_in
450
f = 520 MHz
f = 520 MHz
Z_o = 10 Ω
Z_OL*
450
470 _Zin
f = 400 MHz
Z_OL*
470
Z_in
135
Z_OL*
135
f = 400 MHz
f = 175 MHz
f = 175 MHz
Z_o = 10 Ω
V_DD = 12.5 V, I_DQ = 50 mA, P_out = 3 W
f
Z_in
MHz
Ω
Z_OL*
Ω
450 4.64 +j5.82 13.11 +j2.15
470 5.42 +j6.34 12.16 +j3.26
500 5.96 +j5.45 11.03 +j5.42
520 4.28 +j4.94 10.99 +j7.18
V_DD = 12.5 V, I_DQ = 50 mA, P_out = 3 W
f
Z_in
MHz
Ω
Z_OL*
Ω
400 4.72 +j4.38 12.57 +j1.88
440 4.88 +j6.34 11.21 +j5.87
470 3.22 +j5.24 9.82 +j8.63
V_DD = 12.5 V, I_DQ = 50 mA, P_out = 3 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135
16.55 +j1.82 22.01 +j10.32
155
15.59 +j5.38 22.03 +j8.07
175
15.55 +j9.43 22.08 +j6.85
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 120 pF capacitor in
series with gate. (See Figure 1).
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 130 pF capacitor in
series with gate. (See Figure 10).
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 130 pF capacitor in
series with gate. (See Figure 19).
Z_OL* = Complex conjugate of the load
Z_OL* = Complex conjugate of the load
impedance at given output power,
impedance at given output power,
voltage, frequency, and η_D > 50 %.
voltage, frequency, and η_D > 50 %.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 29. Series Equivalent Input and Output Impedance
MRF1513NT1
10
RF Device Data
Freescale Semiconductor