MC9S08SF4 Datasheet, PDF (8/32 Pages) Freescale Semiconductor, Inc – Technical Data

DC Characteristics
Table 4. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Series resistance
R1
Human
Body
Storage capacitance
C
Number of pulses per pin
—
1500
Ω
100
pF
1
Minimum input voltage limit
—
Latch-up
Maximum input voltage limit
—
–2.5
V
7.5
V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating¹
Symbol
Min
Max Unit
1
Human body model (HBM)
V_HBM
±2000
—
V
2
Charge device model (CDM)
V_CDM
±500
—
V
3
Latch-up current at T_A = 125 °C
I_LAT
±100
—
mA
1 _{Parameter is achieved by design characterization on a small sample size from typical devices}
under typical conditions unless otherwise noted.
3.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 6. DC Characteristics (Temperature Range = –40 to 125 °C Ambient)
Num
1
2
3
4
5
6
7
C
Parameter
P Supply voltage (run, wait, and stop modes.)
Low-voltage detection threshold — high range
P
(V_DD falling)
(V_DD rising)
Low-voltage detection threshold — low range
P
(V_DD falling)
(V_DD rising)
Low-voltage warning threshold — high range
P
(V_DD falling)
(V_DD rising)
Low-voltage warning threshold — low range
P
(V_DD falling)
(V_DD rising)
Low-voltage inhibit reset/recover hysteresis
D
5V
3V
P
Bandgap voltage reference
Factory trimmed at V_DD = 3.0 V, Temp = 25 °C
P
Input high voltage (2.7 V ≤ V_DD ≤ 5.5 V) (all
digital inputs)
P
Input low voltage (2.7 V ≤ V_DD ≤ 5.5 V) (all
digital inputs)
Symbol
V_DD
V_LVDH
V_LVDL
V_LVWH
V_LVWL
V_hys
V_BG
V_IH
V_IL
Min
2.7
3.9
4.0
2.48
2.54
2.66
2.72
2.84
2.90
—
—
1.185
0.65 × V_DD
V_SS – 0.3
Typical
—
—
—
2.56
2.62
—
—
—
—
100
60
1.200
—
—
Max
Unit
5.5
V
4.1
V
4.2
V
2.64
V
2.7
V
2.82
V
2.88
V
3.00
V
3.06
V
—
mV
—
mV
1.215
V
V_DD + 0.3
V
0.35 × V_DD V
MC9S08SF4 Series MCU Data Sheet, Rev. 2
8
Freescale Semiconductor