MC9S08SF4 Datasheet, PDF (22/32 Pages) Freescale Semiconductor, Inc – Technical Data

Flash Specifications
Table 12. PRACMP Specifications (continued)
Num C
Characteristic
10 D Programmable reference generator inputs
11 D Programmable reference generator inputs
12 C Programmable reference generator step size
13 P Programmable reference generator voltage range
Symbol
V_In1
(V_DD50)
V_In2
(V_DD25)
V_step
V_prgout
Min
2.7
2.25
–0.25
V_In/32
Typical
5.0
2.5
0
—
Max
5.5
2.75
0.25
V_in
Unit
V
V
LSB
V
3.12 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 13. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
–40°C to 125°C
V_prog/erase
2.7
—
5.5
V
Supply voltage for read operation
Internal FCLK frequency¹
V_Read
2.7
—
5.5
V
f_FCLK
150
—
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time²
Mass erase time⁽²⁾
Program/erase endurance³
T_L to T_H = –40 °C to 125 °C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
10,000
—
—
9
4
4000
20,000
—
100,000
6.67
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta}
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08SF4 Series MCU Data Sheet, Rev. 2
22
Freescale Semiconductor