MRF6V2150N_10 Datasheet, PDF (7/18 Pages) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Z_o = 10 Ω
Z_source
f = 220 MHz
Z_load
f = 220 MHz
V_DD = 50 Vdc, I_DQ = 450 mA, P_out = 150 W CW
f
MHz
Z_source
Ω
Z_load
Ω
220
2.45 + j6.95
3.90 + j5.50
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 14. Series Equivalent Source and Load Impedance — 220 MHz
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
7