MRF6V2150N_10 Datasheet, PDF(2/18 Page) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6V2150N_10 Datasheet, PDF (2/18 Pages) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

Package Peak Temperature

Unit

260

Â°C

Table 5. Electrical Characteristics (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Drain--Source Breakdown Voltage

(ID = 75 mA, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

2.5

IDSS

Î¼Adc

V(BR)DSS

110

Vdc

IGSS

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 Î¼Adc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VGS(th)

1.62

Vdc

VGS(Q)

1.5

2.6

3.5

Vdc

VDS(on)

0.26

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

Crss

1.6

Coss

Ciss

163

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW

Power Gain

Gps

23.5

26.5

Drain Efficiency

Î·D

68.3

Input Return Loss

IRL

--17

--9

Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW

Power Gain

f = 27 MHz

f = 450 MHz

Gps

32.3

22.9

Drain Efficiency

f = 27 MHz

f = 450 MHz

Î·D

78.7

57.6

Input Return Loss

f = 27 MHz

f = 450 MHz

IRL

--10.6

--17.6

ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

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