MRF6V2150N_10 Datasheet, PDF (5/18 Pages) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
1000
100
C_iss
100
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
C_rss
1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
5
4
V_GS = 3 V
3
2.75 V
2
2.63 V
2.5 V
1
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
--10
--15
V_DD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements, 100 kHz Tone Spacing
--20
I_DQ = 225 mA
--25
--30 _{336 mA}
--35 _{450 mA}
--40
563 mA
--45
685 mA
--50
--55
900 mA
--60
5
10
100
300
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
10
T_C = 25°C
1
1
10
100 200
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
27
26
I_DQ = 675 mA
563 mA
25
450 mA
24
337 mA
23
22 225 mA
V_DD = 50 Vdc
f = 220 MHz
21
1
10
100 200
P_out, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
58
56
P3dB = 52.61 dBm (182.39 W)
Ideal
54
P1dB = 52.27 dBm (168.66 W)
52
Actual
50
V_DD = 50 Vdc, I_DQ = 450 mA
f = 220 MHz
48
22
24
26
28
30
32
P_in, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
5