MRF6V2150N_10 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V_DD = 50 Volts, I_DQ = 450 mA,
P_out = 150 Watts
Power Gain — 25 dB
Drain Efficiency — 68.3%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2150N
Rev. 4, 4/2010
MRF6V2150NR1
MRF6V2150NBR1
10--450 MHz, 150 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V2150NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V2150NBR1
PARTS ARE SINGLE--ENDED
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 150 W CW
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
Unit
-- 0.5, +110 Vdc
-- 0.5, + 12 Vdc
-- 65 to +150 °C
150
°C
225
°C
Symbol
R_θJC
Value ^(2,3)
Unit
0.24
°C/W
RF_in/V_GS
RF_out/V_DS
RF_in/V_GS
RF_out/V_DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
1