MRF6V2150N_10 Datasheet, PDF (17/18 Pages) Freescale Semiconductor, Inc – RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
Date
Feb. 2007
May 2007
Apr. 2008
Dec. 2008
Apr. 2010
Description
• Initial Release of Data Sheet
• Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22, p. 3
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Corrected C_iss test condition to indicate AC stimulus on the V_GS connection versus the V_DS connection,
Dynamic Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 8--10. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 11--13. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
• Added Figs. 15 and 16, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test
Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 8, 9
• Added Fig. 17, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 10
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 17
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
17