MRF6V13250HR3 Datasheet, PDF(7/13 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF6V13250HR3 Datasheet, PDF (7/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

◁

Zo = 10 â¦

Zload

f = 1300 MHz

Zsource

f = 1300 MHz

VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak

MHz

Zsource

â¦

Zload

â¦

1300

5.32 + j4.11

1.17 + j1.48

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 13. Series Equivalent Source and Load Impedance â Pulsed

RF Device Data

Freescale Semiconductor

MRF6V13250HR3 MRF6V13250HSR3

▷