MRF6V13250HR3 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF6V13250H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz.
These devices are suitable for use in pulsed and CW applications.
• Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
Pulsed (200 μsec,
10% Duty Cycle)
250 Peak
1300
22.7
57.0
--18
MRF6V13250HR3
MRF6V13250HSR3
1300 MHz, 250 W, 50 V
LATERAL N--CHANNEL
RF POWER MOSFETs
• Typical Performance: V_DD = 50 Volts, I_DQ = 10 mA, T_C = 25°C
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
CW
230 CW
1300
21.0
55.0
--17
• Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles
• 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec
• CW Capable
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Characterized from 20 V to 50 V for Extended Power Range
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
CASE 465--06, STYLE 1
NI--780
MRF6V13250HR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V13250HSR3
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
T_stg
T_C
T_J
P_D
--0.5, +120
--6.0, +10
-- 65 to +150
150
225
476
2.38
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Pulsed: Case Temperature 65°C, 250 W Pulsed, 200 μsec Pulse Width, 10% Duty
Cycle, 50 Vdc, I_DQ = 100 mA, 1300 MHz
CW: Case Temperature 77°C, 235 W CW, 50 Vdc, I_DQ = 10 mA, 1300 MHz
Z_θJC
R_θJC
0.07
0.42
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
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