MRF6V13250HR3 Datasheet, PDF(2/13 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6V13250HR3 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 50 mA)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 90 Vdc, VGS = 0 Vdc)

IGSS

V(BR)DSS

120

IDSS

Î¼Adc

Vdc

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 640 Î¼Adc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 1.58 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

VGS(th)

1.0

1.8

2.7

Vdc

VGS(Q)

2.0

2.4

3.0

Vdc

VDS(on)

0.1

0.25

0.3

Vdc

Crss

1.2

Coss

Ciss

340

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz

Pulsed, 200 Î¼sec Pulse Width, 10% Duty Cycle

Power Gain

Drain Efficiency

Gps

21.5

22.7

24.0

Î·D

53.5

57.0

Input Return Loss

IRL

--18

--9

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 10 mA, Pout = 230 W CW, f = 1300 MHz, TC = 25Â°C

Power Gain

Gps

21.0

Drain Efficiency

Î·D

55.0

Input Return Loss

IRL

--17

Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 W Avg.),

f = 1300 MHz, Pulsed, 200 Î¼sec Pulse Width, 10% Duty Cycle

VSWR 10:1 at all Phase Angles

Î¨

No Degradation in Output Power

1. Part internally input matched.

MRF6V13250HR3 MRF6V13250HSR3

RF Device Data

Freescale Semiconductor

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