MRF6V13250HR3 Datasheet, PDF (6/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — CW
24
60
23
55
22
50
21
45
20
40
G_ps
19
35
18
30
17
η_D
25
16
V_DD = 50 Vdc
I_DQ = 10 mA
20
15
f = 1300 MHz
15
14
T_C = 25°C
10
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 9. CW Power Gain and Drain Efficiency versus Output Power
25
24
23 ^{IDQ = 700 mA}
500 mA
22
350 mA
21
20
100 mA
19
18
10 mA
17
16
10
V_DD = 50 Vdc
f = 1300 MHz
T_C = 25°C
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. CW Power Gain versus Output Power
60
10 mA
55
100 mA
50
350 mA
500 mA
45
40
I_DQ = 700 mA
35
30
25
20
V_DD = 50 Vdc
f = 1300 MHz
15
T_C = 25°C
10
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 11. CW Efficiency versus Output Power
10⁹
10⁸
10⁷
10⁶
10⁵
10⁴
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 230 W CW, and η_D = 55%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature — CW
MRF6V13250HR3 MRF6V13250HSR3
6
RF Device Data
Freescale Semiconductor